Optimizing Control Factors for Threshold Voltage and Leakage Current in 32 nm PMOS Transistors with the Taguchi Method. Libya Journal of Applied Sciences and Technology, [S. l.], v. 12, n. 1, p. 82–91, 2024. Disponível em: https://www.ljast.ly/ojs3504/index.php/ljast/article/view/6. Acesso em: 14 jun. 2026.